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ikp10n60t trenchstop ? series p power semiconductors 1 rev. 2.2 may 06 low loss duopack : igbt in trenchstop ? and fieldstop technology with soft, fast recovery anti-parallel emcon he diode ? very low v ce(sat) 1.5 v (typ.) ? maximum junction temperature 175 c ? short circuit withstand time ? 5 s ? designed for : - variable speed drive for washing machines, air conditioners and induction cooking - uninterrupted power supply ? trenchstop ? and fieldstop technology for 600 v applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior ? npt technology offers easy parallel switching capability due to positive temperature coefficient in v ce(sat) ? low emi ? low gate charge ? very soft, fast recovery anti-parallel emcon he diode ? qualified according to jedec 1 for target applications ? pb-free lead plating; rohs compliant ? complete product spectrum and pspice models : http://www.infineon.com/igbt/ type v ce i c v ce(sat ),tj=25c t j,max marking code package ikp10n60t 600v 10a 1.5v 175 c K10T60 pg-to-220-3-1 maximum ratings parameter symbol value unit collector-emitter voltage v ce 600 v dc collector current, limited by t jmax t c = 25 c t c = 100 c i c 20 10 pulsed collector current, t p limited by t jmax i cpuls 30 turn off safe operating area v ce 600v, t j 175 c - 30 diode forward current, limited by t jmax t c = 25 c t c = 100 c i f 20 10 diode pulsed current, t p limited by t jmax i fpuls 30 a gate-emitter voltage v ge 20 v short circuit withstand time 2) v ge = 15v, v cc 400v, t j 150 c t sc 5 s power dissipation t c = 25 c p tot 110 w operating junction temperature t j -40...+175 storage temperature t stg -55...+175 soldering temperature, wavesoldering, 1.6 mm (0.063 in.) from case for 10s 260 c 1 j-std-020 and jesd-022 2) allowed number of short circuits: <1000; time between short circuits: >1s. g c e pg-to-220-3-1 www..net
ikp10n60t trenchstop ? series p power semiconductors 2 rev. 2.2 may 06 thermal resistance parameter symbol conditions max. value unit characteristic igbt thermal resistance, junction ? case r thjc 1.35 diode thermal resistance, junction ? case r thjcd 1.9 thermal resistance, junction ? ambient r thja 62 k/w electrical characteristic, at t j = 25 c, unless otherwise specified value parameter symbol conditions min. typ. max. unit static characteristic collector-emitter breakdown voltage v (br)ces v ge =0v, i c =0.2ma 600 - - collector-emitter saturation voltage v ce(sat) v ge = 15v, i c =10a t j =25 c t j =175 c - - 1.5 1.8 2.05 - diode forward voltage v f v ge =0v, i f =10a t j =25 c t j =175 c - - 1.6 1.6 2.0 - gate-emitter threshold voltage v ge(th) i c =0.3ma, v ce = v ge 4.1 4.6 5.7 v zero gate voltage collector current i ces v ce =600v , v ge =0v t j =25 c t j =175 c - - - - 40 1000 a gate-emitter leakage current i ges v ce =0v, v ge =20v - - 100 na transconductance g fs v ce =20v, i c =10a - 6 - s integrated gate resistor r gint none ? dynamic characteristic input capacitance c iss - 551 - output capacitance c oss - 40 - reverse transfer capacitance c rss v ce =25v, v ge =0v, f =1mhz - 17 - pf gate charge q gate v cc =480v, i c = fehler! verweisquelle konnte nicht gefunden werden. a v ge =15v - 62 - nc
ikp10n60t trenchstop ? series p power semiconductors 3 rev. 2.2 may 06 internal emitter inductance measured 5mm (0.197 in.) from case l e - 7 - nh short circuit collector current 1) i c(sc) v ge =15v, t sc 5 s v cc = 400v, t j = 25 c - 100 - a switching characteristic, inductive load, at t j =25 c value parameter symbol conditions min. typ. max. unit igbt characteristic turn-on delay time t d(on) - 12 - rise time t r - 8 - turn-off delay time t d(off) - 215 - fall time t f - 38 - ns turn-on energy e on - 0.16 - turn-off energy e off - 0.27 - total switching energy e ts t j =25 c, v cc =400v, i c =10a, v ge =0/15v, r g =23 ? , l 2) =60nh, c 2) =40pf energy losses include ?tail? and diode reverse recovery. - 0.43 - mj anti-parallel diode characteristic diode reverse recovery time t rr - 115 - ns diode reverse recovery charge q rr - 0.38 - c diode peak reverse recovery current i rrm - 10 - a diode peak rate of fall of reverse recovery current during t b di rr /dt t j =25 c, v r =400v, i f =10a, di f /dt =880a/ s - 680 - a/ s switching characteristic, inductive load, at t j =175 c value parameter symbol conditions min. typ. max. unit igbt characteristic turn-on delay time t d(on) - 10 - rise time t r - 11 - turn-off delay time t d(off) - 233 - fall time t f - 63 - ns turn-on energy e on - 0.26 - turn-off energy e off - 0.35 - total switching energy e ts t j =175 c, v cc =400v, i c =10a, v ge =0/15v, r g = 23 ? l 1) =60nh, c 1) =40pf energy losses include ?tail? and diode reverse recovery. - 0.61 - mj anti-parallel diode characteristic diode reverse recovery time t rr - 200 - ns diode reverse recovery charge q rr - 0.92 - c diode peak reverse recovery current i rrm - 13 - a diode peak rate of fall of reverse recovery current during t b di rr /dt t j =175 c v r =400v, i f =10a, di f /dt =880a/ s - 390 - a/ s 1) allowed number of short circuits: <1000; time between short circuits: >1s. 2) leakage inductance l a nd stray capacity c due to dynamic test circuit in figure e. 1) leakage inductance l a nd stray capacity c due to dynamic test circuit in figure e.
ikp10n60t trenchstop ? series p power semiconductors 4 rev. 2.2 may 06 i c , collector current 10hz 100hz 1khz 10khz 100khz 0a 5a 10a 15a 20a 25a 30a t c =110c t c =80c i c , collector current 1v 10v 100v 1000v 0,1a 1a 10a 20s 100s 500s dc t p =1s 5s 10ms f , switching frequency v ce , collector - emitter voltage figure 1. collector current as a function of switching frequency ( t j 175 c, d = 0.5, v ce = 400v, v ge = 0/+15v, r g = 23 ? ) figure 2. safe operating area ( d = 0, t c = 25 c, t j 175 c; v ge =15v) p tot , power dissipation 25c 50c 75c 100c 125c 150c 0w 20w 40w 60w 80w 100w 120w i c , collector current 25c 75c 125c 0a 10a 20a 30a t c , case temperature t c , case temperature figure 3. power dissipation as a function of case temperature ( t j 175 c) figure 4. collector current as a function of case temperature ( v ge 15v, t j 175 c) i c i c
ikp10n60t trenchstop ? series p power semiconductors 5 rev. 2.2 may 06 i c , collector current 0v 1v 2v 3v 4v 0a 5a 10a 15a 20a 25a 30a 15v 6v 8v 10v 12v v ge =20v i c , collector current 0v 1v 2v 3v 4v 5v 0a 5a 10a 15a 20a 25a 30a 15v 6v 8v 10v 12v v ge =20v v ce , collector - emitter voltage v ce , collector - emitter voltage figure 5. typical output characteristic ( t j = 25c) figure 6. typical output characteristic ( t j = 175c) i c , collector current 0v 2v 4v 6v 8v 10v 0a 5a 10a 15a 20a 25a 25c t j =175c v ce(sat), collector - emitt saturation voltage -50c 0c 50c 100c 150c 0,0v 0,5v 1,0v 1,5v 2,0v 2,5v 3,0v i c =10a i c =20a i c =5a v ge , gate-emitter voltage t j , junction temperature figure 7. typical transfer characteristic (v ce =20v) figure 8. typical collector-emitter saturation voltage as a function of junction temperature ( v ge = 15v)
ikp10n60t trenchstop ? series p power semiconductors 6 rev. 2.2 may 06 t, switching times 0a 5a 10a 15a 20a 1ns 10ns 100ns t r t d(on) t f t d(off) t, switching times 10? 20? 30? 40? 50? 1ns 10ns 100ns t r t d(on) t f t d(off) i c , collector current r g , gate resistor figure 9. typical switching times as a function of collector current (inductive load, t j =175c, v ce = 400v, v ge = 0/15v, r g = 23 ? , dynamic test circuit in figure e) figure 10. typical switching times as a function of gate resistor (inductive load, t j = 175c, v ce = 400v, v ge = 0/15v, i c = 10a, dynamic test circuit in figure e) t, switching times 25c 50c 75c 100c 125c 150c 1ns 10ns 100ns t r t d(on) t f t d(off) v ge(th ) , gate - emitt trshold voltage -50c 0c 50c 100c 150c 0v 1v 2v 3v 4v 5v 6v 7v min. typ. max. t j , junction temperature t j , junction temperature figure 11. typical switching times as a function of junction temperature (inductive load, v ce = 400v, v ge = 0/15v, i c = 10a, r g =23 ? , dynamic test circuit in figure e) figure 12. gate-emitter threshold voltage as a function of junction temperature ( i c = 0.3ma)
ikp10n60t trenchstop ? series p power semiconductors 7 rev. 2.2 may 06 e , switching energy losses 0a 5a 10a 15a 0,0mj 0,2mj 0,4mj 0,6mj 0,8mj 1,0mj e ts * e off *) e on and e ts include losses due to diode recovery e on * e , switching energy losses 10? 20? 30? 40? 50? 0,0 mj 0,2 mj 0,4 mj 0,6 mj 0,8 mj e ts * e on * *) e on and e ts include losses due to diode recovery e off i c , collector current r g , gate resistor figure 13. typical switching energy losses as a function of collector current (inductive load, t j = 175c, v ce = 400v, v ge = 0/15v, r g = 23 ? , dynamic test circuit in figure e) figure 14. typical switching energy losses as a function of gate resistor (inductive load, t j = 175c, v ce = 400v, v ge = 0/15v, i c = 10a, dynamic test circuit in figure e) e , switching energy losses 50c 100c 150c 0,0mj 0,1mj 0,2mj 0,3mj 0,4mj 0,5mj 0,6mj e ts * e on * *) e on and e ts include losses due to diode recovery e off e , switching energy losses 300v 350v 400v 450v 500v 550v 0,0mj 0,2mj 0,4mj 0,6mj 0,8mj e ts * e on * *) e on and e ts include losses due to diode recovery e off t j , junction temperature v ce , collector - emitter voltage figure 15. typical switching energy losses as a function of junction temperature (inductive load, v ce = 400v, v ge = 0/15v, i c = 10a, r g = 23 ? , dynamic test circuit in figure e) figure 16. typical switching energy losses as a function of collector emitter voltage (inductive load, t j = 175c, v ge = 0/15v, i c = 10a, r g = 23 ? , dynamic test circuit in figure e)
ikp10n60t trenchstop ? series p power semiconductors 8 rev. 2.2 may 06 v ge , gate - emitter voltage 0nc 20nc 40nc 60nc 0v 5v 10v 15v 480v 120v c, capacitance 0v 10v 20v 10pf 100pf 1nf c rss c oss c iss q ge , gate charge v ce , collector - emitter voltage figure 17. typical gate charge ( i c =10 a) figure 18. typical capacitance as a function of collector-emitter voltage ( v ge =0v, f = 1 mhz) i c ( sc ) , short circuit collector current 12v 14v 16v 18v 0a 25a 50a 75a 100a 125a 150a t sc , short circuit withstand time 10v 11v 12v 13v 14v 0s 2s 4s 6s 8s 10s 12s v ge , gate - emittetr voltage v ge , gate - emitetr voltage figure 19. typical short circuit collector current as a function of gate- emitter voltage ( v ce 400v, t j 150 c) figure 20. short circuit withstand time as a function of gate-emitter voltage ( v ce =600v , start at t j = 25c, t jmax <150c)
ikp10n60t trenchstop ? series p power semiconductors 9 rev. 2.2 may 06 z thjc , transient thermal resistance 10 s 100 s 1ms 10ms 100ms 10 -2 k/w 10 -1 k/w 10 0 k/w single pulse 0.01 0.02 0.05 0.1 0.2 d =0.5 z thjc , transient thermal resistance 1 s10 s 100 s 1ms 10ms 100ms 10 -2 k/w 10 -1 k/w 10 0 k/w single pulse 0.01 0.02 0.05 0.1 0.2 d =0.5 t p , pulse width t p , pulse width figure 21. igbt transient thermal resistance ( d = t p / t ) figure 22. diode transient thermal impedance as a function of pulse width ( d = t p / t ) t rr , reverse recovery time 200a/s 400a/s 600a/s 800a/s 0ns 50ns 100ns 150ns 200ns 250ns 300ns t j =25c t j =175c q rr , reverse recovery charge 200a/s 400a/s 600a/s 800a/s 0,0c 0,1c 0,2c 0,3c 0,4c 0,5c 0,6c 0,7c 0,8c t j =25c t j =175c di f /dt , diode current slope di f /dt , diode current slope figure 23. typical reverse recovery time as a function of diode current slope ( v r =400v, i f =10a, dynamic test circuit in figure e) figure 24. typical reverse recovery charge as a function of diode current slope ( v r = 400v, i f = 10a, dynamic test circuit in figure e) r ,(k/w) , (s) 0.2911 6.53*10 -2 0.4092 8.33*10 -3 0.5008 7.37*10 -4 0.1529 7.63*10 -5 c 1 = 1 r 1 r 1 r 2 c 2 = 2 r 2 r ,(k/w) , (s) 0.3169 4.629*10 -2 6 0.4734 7.07*10 -3 0.6662 1.068*10 -3 0.4398 1.253*10 -4 c 1 = 1 r 1 r 1 r 2 c 2 = 2 r 2
ikp10n60t trenchstop ? series p power semiconductors 10 rev. 2.2 may 06 i rr , reverse recovery current 200a/s 400a/s 600a/s 800a/s 0a 2a 4a 6a 8a 10a 12a 14a t j =25c t j =175c d i rr /dt , diode peak rate of fall of reverse recovery current 400a/s 600a/s 800a/s 0a/s -100a/s -200a/s -300a/s -400a/s -500a/s -600a/s -700a/s t j =25c t j =175c di f /dt , diode current slope di f /dt , diode current slope figure 25. typical reverse recovery current as a function of diode current slope ( v r = 400v, i f = 10a, dynamic test circuit in figure e) figure 26. typical diode peak rate of fall of reverse recovery current as a function of diode current slope ( v r =400v, i f =10a, dynamic test circuit in figure e) i f , forward current 0v 1v 2v 0a 10a 20a 30a 175c t j =25c v f , forward voltage -50c 0c 50c 100c 150c 0,0v 0,5v 1,0v 1,5v 2,0v 10a i f =20a 5a v f , forward voltage t j , junction temperature figure 27. typical diode forward current as a function of forward voltage figure 28. typical diode forward voltage as a function of junction temperature
ikp10n60t trenchstop ? series p power semiconductors 11 rev. 2.2 may 06 dimensions symbol [mm] [inch] min max min max a 9.70 10.30 0.3819 0.4055 b 14.88 15.95 0.5858 0.6280 c 0.65 0.86 0.0256 0.0339 d 3.55 3.89 0.1398 0.1531 e 2.60 3.00 0.1024 0.1181 f 6.00 6.80 0.2362 0.2677 g 13.00 14.00 0.5118 0.5512 h 4.35 4.75 0.1713 0.1870 k 0.38 0.65 0.0150 0.0256 l 0.95 1.32 0.0374 0.0520 m 2.54 typ. 0.1 typ. n 4.30 4.50 0.1693 0.1772 p 1.17 1.40 0.0461 0.0551 t 2.30 2.72 0.0906 0.1071 to-220ab pg-to220-3-1
ikp10n60t trenchstop ? series p power semiconductors 12 rev. 2.2 may 06 figure a. definition of switching times figure b. definition of switching losses i rrm 90% i rrm 10% i rrm di /dt f t rr i f i,v t q s q f t s t f v r di /dt rr q=q q rr s f + t=t t rr s f + figure c. definition of diodes switching characteristics p(t) 12 n t(t) j 1 1 2 2 figure d. thermal equivalent circuit figure e. dynamic test circuit leakage inductance l =60nh a n d stray capacity c =40pf.
ikp10n60t trenchstop ? series p power semiconductors 13 rev. 2.2 may 06 edition 2006-01 published by infineon technologies ag 81726 mnchen, germany ? infineon technologies ag 11/20/06. all rights reserved. attention please! the information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics (?beschaffenheitsgarantie?). with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life-support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

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